
- Power Electronics Tutorial
- Power Electronics - Home
- Power Electronics - Introduction
- Power Electronics - Switching Devices
- Linear Circuit Elements
- Power Semiconductor Devices
- Silicon Controlled Rectifier
- Power Electronics - TRIAC
- Power Electronics - BJT
- Power Electronics - IGBT
- Power Electronics - MOSFET
- Solved Example
- Phase Controlled Converters
- Power Electronics - Pulse Converters
- Effect of Source Inductance
- Performance Parameters
- Reactive Power Control of Converters
- Power Electronics - Dual Converters
- Solved Example
- DC to DC Converters
- Power Electronics - Choppers
- Power Electronics - Control Methods
- Resonant Switching
- DC Converters Solved Example
- AC to DC Converters
- Single Phase AC Voltage Controllers
- Power Electronics - Cycloconverters
- Integral Cycle Control
- Power Electronics - Matrix Converters
- Solved Example
- Power Electronics Resources
- Power Electronics - Quick Guide
- Power Electronics - Useful Resources
- Power Electronics - Discussion
- Selected Reading
- UPSC IAS Exams Notes
- Developer's Best Practices
- Questions and Answers
- Effective Resume Writing
- HR Interview Questions
- Computer Glossary
- Who is Who
Power Semiconductor Devices Solved Ex
A (BJT) emits a current of 1mA, and has emitter efficiency of 0.99. The base transport factor is 0.994 and a depletion layer recombination factor is 0.997. For the BJT calculate the following −
The transport factor
The rewritten transport factor is given by −
$$\alpha =\gamma _{E}\times \alpha _{T}\times \delta _{r}$$Substituting the values, we get
$$\alpha =0.99\times 0.994\times 0.997=0.981$$The current gain
Current gain is given by −
$$\beta =\frac{I_{C}}{I_{B}}=\frac{\alpha }{1-\alpha }$$Substituting the values, we get
$$\beta =\frac{0.981}{1-0.981}=51.6$$The collector current
$$I_{C}=\alpha \times I_{E}=0.981\times 1=0.981mA$$The base current
$$I_{B}=I_{E}-I_{C}=1-0.981=19\mu A$$Advertisements