In this post, we will understand the difference between EPROM and EEPROM
UV (ultra violet) rays are used to erase the content in EPROM.
It includes a rock crystal window at the top of it.
The relative cell size in an EPROM is 1.
EPROM is considered as the modern version of PROM.
EPROM is an external programming technique.
Once erased, EPROM memory can’t be reprogrammed.
The transistor used with EPROM consumes 12.5 volts.
The hot electron injection programming technique is used with EPROM.
The operation of erasing consumes 15 to 20 minutes in EPROM.
To erase and reprogram the system’s BIOS, EPROM chip has to be switched off from the circuit.
An electric signal is used to erase the contents of EEPROM.
The area in an EEPROM is completely sheathed in an opaque plastic case.
The relative cell size in an EEPROM is 3.
EEPROM is considered as the modern version of EPROM.
EEPROM is an external programming technique.
EEPROM can be reprogrammed after erasing (like EPROM).
The transistor used with EEPROM consumes 5 volts.
The tunnel effect is used as programming technique in EEPROM.
Erasing contents of EEPROM consumes 5 milliseconds.
The operation of erasing and reprogramming can be done without switching off the electrical circuit of the system.